The AT45DB641E is a low voltage, low power Serial Flash Device. It boasts 400nA Ultra Deep Power Down currents. The device operates from 1.7V-3.6V and up to 85MHz with a Low Power Read at 15MHz. The AT45DB641E has a flexible erase architecture and can be erased by Page(256bytes), Block(2KB), Sector(64KB), or a full chip erase. The device also offers flexible Writes in which it can be programmed either by Bytes or by Page(256bytes) and has Dual-Input Byte/Page Program capability along with Sequential Program Mode capability. The AT45DB641E offers several package options including 8ld SOIC(0.208” wide), 9-Ball BGA(6x6mm) and an 8ld UDFN(5x6x0.6mm) package of which the smMEM-AT45DB641 breakout board makes use of.
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